"Non-volatile memory (NVM) technologies such as resistive random access memory (RRAM) or phase change memory (PCM) has shown the potential in next generation data storage applications. NVM devices need to be packed densely in memory arrays and require a selector device and architecture with high areal density, making three dimensional (3D) integration of both the memory and selector active layers cost competitive and attractive," said
NVM devices use a selector device, such as the ovonic threshold switch (
Utilizing Intermolecular's innovative platform, a suitable nucleation layer was identified and deployed to realize continuous, conformal coatings of elemental Te on high aspect ratio test structures.
Materials Innovation Resources:
PVD Chalcogenides Brochure
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